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(parent: 4c1a39e) | patch
hw/riscv: More flexible FDT placement for MPFS
authorSebastian Huber <sebastian.huber@embedded-brains.de>
Wed, 19 Mar 2025 06:13:34 +0000 (07:13 +0100)
committerAlistair Francis <alistair.francis@wdc.com>
Mon, 19 May 2025 03:30:24 +0000 (13:30 +1000)
commitcae44a92ab23811deeefa0a44b1bdec6cfa8e4b9
tree3276dabd7a631bf794d92516273d458f6550f9c3tree
parent4c1a39eebc6a9f1db816ff6c23e3d42ba52e2601commit | diff
hw/riscv: More flexible FDT placement for MPFS

If the kernel entry is in the high DRAM area, place the FDT into this
area.

Signed-off-by: Sebastian Huber <sebastian.huber@embedded-brains.de>
Reviewed-by: Alistair Francis <alistair.francis@wdc.com>
Message-ID: <20250319061342.26435-3-sebastian.huber@embedded-brains.de>
Signed-off-by: Alistair Francis <alistair.francis@wdc.com>
hw/riscv/microchip_pfsoc.c diff | blob | blame | history
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